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| N-Channel JFET Monolithic Dual CORPORATION U440 / U441 FEATURES DESCRIPTION The U440 Series is an N-Channel Monolithic Dual JFET designed for high speed amplifier circuits. Featuring high gain (> 6 mS typical), low leakage (< 1pA typ) and low noise. This series is an excellent choice for differential amplifier designs. ORDERING INFORMATION Part Package Temparature Range -55oC to +150oC -55oC to +150oC U440-1 Hermetic TO-71 Package XU440-1 Sorted Chips in Carriers * High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS * Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical * Low Noise * Differential Wideband Amplifiers * VHF/UHF Amplifiers * Test and Measurement * Multi-Chip/Hybrids APPLICATIONS PIN CONFIGURATION TO-71 1 2 3 4 5 6 SOURCE 1 DRAIN 1 GATE 1 SOURCE 2 DRAIN 2 GATE 2 4 3 2 1 5 6 BOTTOM VIEW S2 D2 G1 D1 G2 S1 CJ1 U440 / U441 CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter/Test Condition Gate-Drain Voltage Gate-Source Voltage Gate-Gate Voltage Forward Gate Current Power Dissipation (per side) (total) Power Derating (per side) (total) Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Symbol VGD VGS VGG IG PD Limit -25 -25 50 50 250 350 2 2.8 -55 to 150 -65 to 200 300 Unit V V V mA mW mW mW/ oC mW/ oC o C o C o C TJ Tstg TL ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) SYMBOL STATIC V(BR)GSS VGS(OFF ) IDSS IGSS Gate-Source Breakdown Voltage Gate-Source Cut off Voltage Saturation Drain Current Gate Reverse Current 2 CHARACTERISTCS TYP1 U440 MIN MAX U441 MIN MAX UNIT TEST CONDITIONS -35 -3.5 15 -1 -2 -25 -1 6 -6 30 -500 -25 -1 6 -6 30 -500 V mA pA nA IG = -1A, VDS = 0V VDS = 10V, ID = 1nA VDS = 10V, VGS = 0V VGS = -15V, VDS = 0V TA = 150 oC VDG = 10V, ID = 5mA TA = 125 oC IG = 1mA, VDS = 0V IG VGS(F) DYNAMIC gfs gos Ciss Crss en MATCHING | VGS1-VGS2| | VGS1-VGS2| T IDSS1 IDSS2 gfs1 gfs2 CMRR Gate Operating Current Gate-Source Forward Voltage -1 -0.3 0.7 -500 -500 pA nA V Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage 6 70 3 1 4 4.5 9 200 4.5 9 200 mS S pF VDG = 10V, ID = 5mA f = 1kHz VDG = 10V, ID = 5mA f = 1MHz VDG = 10V, ID = 5mA f = 10kHz nV/ Hz Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature Saturation Drain Current Ratio Transconductance Ratio Common Mode Rejection Ratio 6 20 20 0.97 0.97 85 10 20 mV V/ oC VDG = 10V, ID = 5mA T = -55 to 25 oC VDG =10V, T = 25 to 125oC ID = 5mA VDS = 10V, VGS = 0V VDG = 10V, ID = 5mA f= 1 kHz dB VDD = 5 to 10V, ID = 5mA NOTES: 1. For design aid only, not subject to production testing. 2. Pulse test; PW = 300s, duty cycle 3%. |
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